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Bipolar Transistor Arrays, Pre-Biased

RN2902,LF(CT

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RN2902,LF(CT

TRANS 2PNP PREBIAS 0.2W US6

Manufacturer: Toshiba Semiconductor and Storage

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

Toshiba Semiconductor and Storage RN2902-LF-CT is a dual PNP pre-biased bipolar transistor array. This device features a collector current of 100mA and a collector-emitter breakdown voltage of 50V. With a transition frequency of 200MHz and a maximum power dissipation of 200mW, it is suitable for applications requiring compact, high-performance switching. The internal base resistors are specified as 10kOhms for both R1 and R2. The RN2902-LF-CT is supplied in a 6-TSSOP, SC-88, SOT-363 package, commonly referred to as US6, and is available on tape and reel. This component finds utility in various industrial automation and consumer electronics designs.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 PNP - Pre-Biased (Dual)
Power - Max200mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 5V
Frequency - Transition200MHz
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)10kOhms
Supplier Device PackageUS6

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