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RN2902,LF

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RN2902,LF

TRANS 2PNP PREBIAS 0.2W US6

Manufacturer: Toshiba Semiconductor and Storage

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

Toshiba Semiconductor and Storage RN2902-LF is a dual pre-biased PNP bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device offers a transition frequency of 200MHz and a minimum DC current gain (hFE) of 50 at 10mA and 5V. Each transistor within the package includes integrated base resistors of 10kOhms (R1) and emitter base resistors of 10kOhms (R2). The maximum power dissipation is 200mW. The RN2902-LF is supplied in a US6 package, commonly known as 6-TSSOP, SC-88, or SOT-363, and comes on a tape and reel. This device is suitable for applications in industrial automation and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 PNP - Pre-Biased (Dual)
Power - Max200mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 5V
Frequency - Transition200MHz
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)10kOhms
Supplier Device PackageUS6

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