RN2714,LF
PNPX2 BRT Q1BSR1KOHM Q1BER10KOHMManufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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Toshiba Semiconductor and Storage RN2714-LF is a dual PNP pre-biased bipolar transistor array. This component features a 1kO internal base resistor (R1) and a 10kO internal emitter-base resistor (R2) for simplified circuit design. It is rated for a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation of 200mW. The device exhibits a minimum DC current gain (hFE) of 50 at 10mA collector current and 5V Vce. Saturation voltage is specified at 300mV maximum for 250µA base current and 5mA collector current. The RN2714-LF is supplied in a 5-TSSOP, SC-70-5, SOT-353 package, mounted via surface mount technology, and is delivered on tape and reel. This transistor array is commonly utilized in industrial automation, consumer electronics, and telecommunications applications requiring simplified input circuitry and reduced component count.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 5-TSSOP, SC-70-5, SOT-353 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 1kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | USV |
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