RN2712JE(TE85L,F)
TRANS 2PNP PREBIAS 0.1W ESVManufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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Toshiba Semiconductor and Storage RN2712JE-TE85L-F- is a dual, pre-biased PNP bipolar junction transistor (BJT) array designed for surface mount applications. This component features an emitter-coupled configuration and is packaged in an ESV (SOT-553) for space-constrained designs. It boasts a collector current capability of 100mA, a collector-emitter breakdown voltage of 50V, and a transition frequency of 200MHz. The integrated base resistors, with a typical value of 22kOhms, simplify circuit design by eliminating the need for external biasing components. This device exhibits a minimum DC current gain (hFE) of 120 at 1mA and 5V, and a saturation voltage of 300mV at 250µA and 5mA. The Toshiba Semiconductor and Storage RN2712JE-TE85L-F- is suitable for use in a variety of electronic circuits, including switching and amplification applications across industries such as consumer electronics and industrial automation. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-553 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Frequency - Transition | 200MHz |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | ESV |
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