RN2710,LF
PNPX2 BRT Q1BSR47KOHM Q1BER22KOHManufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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The Toshiba Semiconductor and Storage RN2710-LF is a pre-biased bipolar transistor array featuring two PNP transistors in a single USV package. This device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a transition frequency of 200MHz. The integrated base resistors include a 4.7kOhm resistor (R1). It exhibits a typical DC current gain (hFE) of 120 at 1mA collector current and 5V collector-emitter voltage. Saturation voltage is specified at a maximum of 300mV for a base current of 250µA and collector current of 5mA. The component is suitable for surface mounting and comes in a Tape & Reel (TR) package. Applications for this device can be found in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 5-TSSOP, SC-70-5, SOT-353 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Frequency - Transition | 200MHz |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | USV |
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