RN2709JE(TE85L,F)
TRANS 2PNP PREBIAS 0.1W ESVManufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
Toshiba Semiconductor and Storage RN2709JE-TE85L-F- is a dual PNP pre-biased bipolar transistor array designed for surface mount applications. This component features emitter-coupled configuration, offering a collector current (Ic) of up to 100mA and a breakdown voltage (Vce) of 50V. With a transition frequency (fT) of 200MHz, it is suitable for high-speed switching and amplification circuits. The integrated base resistors, R1 (47kO) and R2 (22kO), simplify circuit design by eliminating the need for external biasing components. The device exhibits a typical DC current gain (hFE) of 70 at 10mA collector current and 5V collector-emitter voltage, with a saturation voltage (Vce(sat)) of 300mV at 250µA base current and 5mA collector current. The maximum power dissipation is 100mW. This component is commonly found in industrial automation, consumer electronics, and communication systems requiring compact and efficient transistor solutions. The package type is SOT-553, supplied in Tape & Reel (TR).
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-553 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Frequency - Transition | 200MHz |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | ESV |