Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar Transistor Arrays, Pre-Biased

RN2706,LF

Banner
productimage

RN2706,LF

PNPX2 BRT Q1BSR4.7KOHM Q1BER47KO

Manufacturer: Toshiba Semiconductor and Storage

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount USV

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case5-TSSOP, SC-70-5, SOT-353
Mounting TypeSurface Mount
Transistor Type2 PNP - Pre-Biased (Dual)
Power - Max200mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Frequency - Transition200MHz
Resistor - Base (R1)4.7kOhms
Resistor - Emitter Base (R2)47kOhms
Supplier Device PackageUSV

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
RN2708JE(TE85L,F)

TRANS 2PNP PREBIAS 0.1W ESV

product image
RN4986,LXHF(CT

AUTO AEC-Q 2-IN-1 (POINT-SYM) NP

product image
RN4607(TE85L,F)

TRANS NPN/PNP PREBIAS 0.3W SM6