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Bipolar Transistor Arrays, Pre-Biased

RN2510(TE85L,F)

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RN2510(TE85L,F)

TRANS 2PNP PREBIAS 0.3W SMV

Manufacturer: Toshiba Semiconductor and Storage

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 300mW Surface Mount SMV

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-74A, SOT-753
Mounting TypeSurface Mount
Transistor Type2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max300mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Frequency - Transition200MHz
Resistor - Base (R1)4.7kOhms
Resistor - Emitter Base (R2)-
Supplier Device PackageSMV

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