RN2506(TE85L,F)
TRANS 2PNP PREBIAS 0.3W SMVManufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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Toshiba Semiconductor and Storage RN2506-TE85L-F- is a dual, emitter-coupled PNP bipolar transistor array. This pre-biased device features internal base resistors of 4.7kO (R1) and 47kO (R2). It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The RN2506-TE85L-F- exhibits a transition frequency of 200MHz and a maximum power dissipation of 300mW. Saturation voltage at 250µA base and 5mA collector current is 300mV. The component is supplied in a SMV (SC-74A, SOT-753) surface mount package, delivered on tape and reel. This transistor array is suitable for applications in industrial controls and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74A, SOT-753 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 200MHz |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SMV |
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