RN2505TE85LF
TRANS 2PNP PREBIAS 0.3W SMVManufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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Toshiba Semiconductor and Storage RN2505TE85LF is a 2 PNP pre-biased bipolar transistor array. This component features emitter-coupled PNP transistors with integrated base resistors, simplifying circuit design for high-frequency switching applications. It offers a collector current of 100mA, a collector-emitter breakdown voltage of 50V, and a transition frequency of 200MHz. The device is housed in an SMV (SC-74A, SOT-753) surface mount package, supplied on tape and reel for automated assembly. With a maximum power dissipation of 300mW and a Vce(sat) of 300mV at 250µA/5mA, it is suitable for use in various consumer electronics and industrial control systems. The built-in bias resistors, R1 at 2.2kOhms and R2 at 47kOhms, provide a guaranteed DC current gain (hFE) of 80 at 10mA/5V.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74A, SOT-753 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 200MHz |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SMV |
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