RN2502(TE85L,F)
TRANS 2PNP PREBIAS 0.3W SMVManufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
Toshiba Semiconductor and Storage RN2502-TE85L-F- is a pre-biased bipolar transistor array featuring two PNP transistors in an emitter-coupled configuration. This component offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It boasts a transition frequency of 200MHz and a maximum power dissipation of 300mW. The device includes integrated base resistors of 10kOhms and emitter-base resistors of 10kOhms, simplifying circuit design. Delivered in a Tape & Reel (TR) package, the RN2502-TE85L-F- is suited for surface mount applications, specifically within the SC-74A, SOT-753 footprint. Typical applications include general-purpose amplification and switching in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74A, SOT-753 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Frequency - Transition | 200MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | SMV |
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