RN1970FE(TE85L,F)
TRANS 2NPN PREBIAS 0.1W ES6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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Toshiba Semiconductor and Storage RN1970FE-TE85L-F- is a pre-biased bipolar transistor array featuring two NPN transistors. This component operates with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device offers a transition frequency of 250MHz, a minimum DC current gain (hFE) of 120 at 1mA and 5V, and a maximum collector cutoff current (ICBO) of 100nA. The saturation voltage (Vce) is 300mV at 250µA and 5mA. It includes an integrated base resistor of 4.7kOhms. The RN1970FE-TE85L-F- is supplied in an ES6 package, specifically SOT-563/SOT-666, for surface mounting. This device is suitable for applications in consumer electronics and industrial control systems. It is delivered in a tape and reel (TR) package. The maximum power dissipation is 100mW.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | ES6 |
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