RN1970(TE85L,F)
TRANS 2NPN PREBIAS 0.2W US6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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Toshiba Semiconductor and Storage RN1970-TE85L-F is a dual NPN pre-biased bipolar transistor designed for surface mount applications. This component features a collector current capability of 100mA and a collector-emitter breakdown voltage of 50V. The device offers a transition frequency of 250MHz and a maximum power dissipation of 200mW. It includes an integrated base resistor (R1) of 4.7kOhms, simplifying circuit design for switching and amplifier applications. The RN1970-TE85L-F is supplied in a US6 package, compatible with 6-TSSOP, SC-88, and SOT-363 pinouts, and is presented in cut tape (CT) packaging. This transistor array is commonly utilized in industrial control systems, consumer electronics, and communication equipment.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | US6 |
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