RN1967FE(TE85L,F)
TRANS 2NPN PREBIAS 0.1W ES6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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Toshiba Semiconductor and Storage RN1967FE-TE85L-F- is a dual NPN pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This ES6 packaged component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. Featuring a transition frequency of 250MHz and a maximum power dissipation of 100mW, it includes integrated base resistors of 10kOhms (R1) and emitter base resistors of 47kOhms (R2). The device exhibits a minimum DC current gain (hFE) of 80 at 10mA and 5V, with a collector cutoff current (ICBO) of 100nA. Saturation voltage (Vce Sat) is rated at a maximum of 300mV at 250µA base current and 5mA collector current. This component is commonly utilized in industrial and consumer electronics for switching and amplification applications. The RN1967FE-TE85L-F- is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | ES6 |
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