RN1966FE(TE85L,F)
TRANS 2NPN PREBIAS 0.1W ES6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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Toshiba Semiconductor and Storage RN1966FE-TE85L-F- is a dual NPN pre-biased bipolar transistor (BJT) in an ES6 package. This device features a collector current capability of 100mA and a collector-emitter breakdown voltage of 50V. The transition frequency is specified at 250MHz. Integrated base resistors of 4.7kOhms (R1) and emitter base resistors of 47kOhms (R2) are included, providing a minimum DC current gain (hFE) of 80 at 10mA, 5V. The maximum power dissipation is 100mW. Vce saturation is a maximum of 300mV at 250µA, 5mA. This component finds application in digital logic circuits, switching applications, and interface circuitry within the industrial and consumer electronics sectors. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | ES6 |
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