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Bipolar Transistor Arrays, Pre-Biased

RN1965FE(TE85L,F)

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RN1965FE(TE85L,F)

TRANS 2PNP PREBIAS 0.1W ES6

Manufacturer: Toshiba Semiconductor and Storage

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

Toshiba Semiconductor and Storage RN1965FE-TE85L-F- is a dual PNP pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. Its transition frequency reaches 250MHz, with a power dissipation rating of 100mW. The internal base resistors are 2.2kOhms (R1) and 47kOhms (R2), providing built-in bias for simplified circuit design. The DC current gain (hFE) is a minimum of 80 at 10mA collector current and 5V collector-emitter voltage. Saturation voltage is specified at a maximum of 300mV at 250µA base current and 5mA collector current. The device is supplied in an ES6 package, equivalent to SOT-563 or SOT-666, on tape and reel. Applications include general-purpose switching and amplification in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Transistor Type2 PNP - Pre-Biased (Dual)
Power - Max100mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Frequency - Transition250MHz
Resistor - Base (R1)2.2kOhms
Resistor - Emitter Base (R2)47kOhms
Supplier Device PackageES6

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