RN1964FE(TE85L,F)
TRANS 2NPN PREBIAS 0.1W ES6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
Toshiba Semiconductor and Storage presents the RN1964FE-TE85L-F-, a pre-biased dual NPN bipolar transistor packaged in an ES6 (SOT-563, SOT-666) surface mount configuration on tape and reel. This component features a collector current capability of up to 100mA with a collector-emitter breakdown voltage of 50V. The integrated base resistors, R1 and R2, are both specified at 47kOhms, facilitating simplified circuit design. It offers a minimum DC current gain (hFE) of 80 at 10mA and 5V, with a transition frequency of 250MHz. The maximum collector cutoff current (ICBO) is 100nA, and the Vce saturation is a maximum of 300mV at 250µA/5mA. This device is suitable for applications in consumer electronics and industrial control systems requiring compact, high-performance switching and amplification. The maximum power dissipation is 100mW.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | ES6 |
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