RN1963FE(TE85L,F)
TRANS 2NPN PREBIAS 0.1W ES6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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Toshiba Semiconductor and Storage RN1963FE-TE85L-F- is a dual NPN pre-biased bipolar transistor array designed for surface mount applications. This component features integrated base resistors, specifying 22kOhms for both R1 and R2. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transition frequency is 300MHz, and the device can dissipate up to 100mW. Saturation voltage at 250µA base and 5mA collector current is a maximum of 300mV. The minimum DC current gain (hFE) is 70 at 10mA collector current and 5V Vce. Packaged in an ES6 (SOT-563, SOT-666 equivalent) and supplied on tape and reel, this transistor array is suitable for use in various industrial automation and consumer electronics applications requiring compact, integrated switching solutions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | ES6 |
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