RN1962TE85LF
TRANS 2NPN PREBIAS 0.5W US6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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Toshiba Semiconductor and Storage RN1962TE85LF is a dual NPN pre-biased bipolar transistor in a US6 surface mount package. This component offers a collector-emitter breakdown voltage of 50V and a continuous collector current of 100mA, with a power dissipation of 500mW. The transistor features an integrated base resistor (R1) of 10kOhms and an emitter base resistor (R2) of 10kOhms, providing a typical DC current gain (hFE) of 50 at 10mA, 5V. With a transition frequency of 250MHz, this device is suitable for applications in consumer electronics and industrial control systems. The part is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | US6 |
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