RN1962FE(TE85L,F)
TRANS 2NPN PREBIAS 0.1W ES6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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Toshiba Semiconductor and Storage RN1962FE-TE85L-F- is a pre-biased bipolar transistor featuring dual NPN configurations. This device offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 100mA. With a transition frequency of 250MHz and a maximum power dissipation of 100mW, it is suitable for applications requiring low power switching and amplification. The integrated base resistors are 10kOhms for both R1 and R2. The transistor type is 2 NPN - Pre-Biased (Dual), with a Vce saturation of 300mV at 250µA, 5mA. This component is delivered in a Tape & Reel (TR) package, specifically the ES6 (SOT-563, SOT-666) surface mount package. It finds use in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | ES6 |
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