RN1961(TE85L,F)
TRANS 2NPN PREBIAS 0.2W US6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
Toshiba Semiconductor and Storage RN1961-TE85L-F- is a dual NPN pre-biased bipolar transistor array housed in a 6-TSSOP, SC-88, SOT-363 (US6) surface mount package. This component features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 50V. With a transition frequency of 250MHz and a maximum power dissipation of 200mW, it offers a minimum DC current gain (hFE) of 30 at 10mA and 5V. The integrated base resistors, R1 and R2, are both 4.7 kOhms. This device is suitable for applications in industrial and consumer electronics requiring compact switching and amplification. The component is supplied on a Tape & Reel (TR).
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 4.7kOhms |
| Supplier Device Package | US6 |
Request a Quote
Clients Also Buy
RN2709JE(TE85L,F)
TRANS 2PNP PREBIAS 0.1W ESV
RN2906(T5L,F,T)
TRANS 2PNP PREBIAS 0.2W US6
RN2714,LF
PNPX2 BRT Q1BSR1KOHM Q1BER10KOHM
