RN1906FE(T5L,F,T)
TRANS 2NPN PREBIAS 0.1W ES6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
Toshiba Semiconductor and Storage RN1906FE-T5L-F-T is a dual NPN pre-biased bipolar transistor. This component features a collector current of 100mA and a collector-emitter breakdown voltage of 50V. The transition frequency is 250MHz. Integrated base resistors of 4.7kOhms (R1) and 47kOhms (R2) simplify circuit design. With a maximum power dissipation of 100mW, it offers a DC current gain (hFE) of 80 at 10mA, 5V. The transistor is packaged in an ES6 surface mount configuration, supplied on tape and reel. This device is suitable for applications in industrial automation and consumer electronics requiring compact, low-power switching and amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | ES6 |
Request a Quote
Clients Also Buy
RN1510(TE85L,F)
TRANS 2NPN PREBIAS 0.3W SMV
RN1907,LXHF(CT
AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
RN2702TE85LF
TRANS 2PNP PREBIAS 0.2W USV
