RN1906(T5L,F,T)
TRANS 2NPN PREBIAS 0.2W US6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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Toshiba Semiconductor and Storage RN1906-T5L-F-T- is a dual NPN pre-biased bipolar transistor array. This device features a collector current capability of 100mA and a collector-emitter breakdown voltage of 50V. With a transition frequency of 250MHz, it is suitable for applications requiring fast switching. The integrated base resistors, R1 (4.7kOhms) and R2 (47kOhms), simplify circuit design. The transistor exhibits a minimum DC current gain (hFE) of 80 at 10mA and 5V, and a Vce saturation of 300mV at 250µA and 5mA. The device is supplied in a 6-TSSOP, SC-88, SOT-363 package for surface mounting and is delivered on tape and reel. This component finds application in various consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | US6 |
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