RN1906,LF
TRANS 2NPN PREBIAS 0.2W US6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
Toshiba Semiconductor and Storage RN1906-LF is a dual NPN pre-biased bipolar transistor designed for surface mount applications. This component operates with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features a transition frequency of 250MHz and a maximum power dissipation of 200mW. The device includes integrated base resistors for simplified circuit design, with R1 at 4.7kOhms and R2 at 47kOhms. The DC current gain (hFE) is a minimum of 80 at 10mA and 5V. Saturation voltage (Vce) is specified at 300mV maximum for an input of 250µA and 5mA collector current. The RN1906-LF is supplied in a 6-TSSOP, SC-88, SOT-363 package, also identified as US6, and is available on tape and reel. This transistor array is commonly utilized in industrial automation, consumer electronics, and telecommunications equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | US6 |
Request a Quote
Clients Also Buy
RN2708JE(TE85L,F)
TRANS 2PNP PREBIAS 0.1W ESV
RN4986,LXHF(CT
AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
RN4607(TE85L,F)
TRANS NPN/PNP PREBIAS 0.3W SM6
