RN1905,LF(CT
TRANS 2NPN PREBIAS 0.2W US6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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Toshiba Semiconductor and Storage RN1905-LF-CT is a pre-biased bipolar transistor array featuring two NPN transistors. This device offers a collector-emitter breakdown voltage of 50V and a continuous collector current of 100mA. With a transition frequency of 250MHz and a maximum power dissipation of 200mW, it is suitable for applications requiring simplified biasing networks. The integrated base resistors are 2.2kOhms for R1 and 47kOhms for R2, with a minimum DC current gain (hFE) of 80 at 10mA and 5V. The saturation voltage (Vce Sat) is a maximum of 300mV at 250µA and 5mA. This component is supplied in a US6 package, commonly known as 6-TSSOP, SC-88, or SOT-363, for surface mounting. It is available on tape and reel. The RN1905-LF-CT finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | US6 |
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