RN1905,LF
TRANS 2NPN PREBIAS 0.2W US6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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Toshiba Semiconductor and Storage RN1905-LF is a dual NPN pre-biased bipolar transistor array. This surface mount component, housed in a US6 package (6-TSSOP, SC-88, SOT-363), offers a collector-emitter breakdown voltage of 50V and a continuous collector current of 100mA. The internal base resistors are specified at 2.2kOhms (R1) and 47kOhms (R2), providing a minimum DC current gain (hFE) of 80 at 10mA, 5V. With a transition frequency of 250MHz and a maximum power dissipation of 200mW, the RN1905-LF is suitable for applications in consumer electronics and industrial control systems. The device exhibits a Vce saturation of 300mV at 250µA, 5mA, and a collector cutoff current of 500nA. This component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | US6 |
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