RN1904,LXHF(CT
AUTO AEC-Q 2-IN-1 (POINT-SYM) NPManufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
Toshiba Semiconductor and Storage presents the RN1904-LXHF-CT, a dual NPN pre-biased bipolar junction transistor (BJT) designed for automotive applications, meeting AEC-Q101 qualification. This device features two NPN transistors in a single US6 package, suitable for surface mount assembly. Each transistor offers a collector-emitter voltage (Vce) breakdown of 50V and a maximum collector current (Ic) of 100mA. With a transition frequency (fT) of 250MHz and a power dissipation of 200mW, it is well-suited for signal amplification and switching in automotive systems. The integrated base resistors are specified at 47kOhms (R1) and 47kOhms (R2), providing a pre-biased configuration. Key parameters include a minimum DC current gain (hFE) of 80 at 10mA, 5V, and a saturation voltage (Vce(sat)) of 300mV at 250µA, 5mA. The component is supplied in Tape & Reel (TR) packaging. This device finds application in automotive infotainment, body control modules, and advanced driver-assistance systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | US6 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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