Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar Transistor Arrays, Pre-Biased

RN1903FE,LXHF(CT

Banner
productimage

RN1903FE,LXHF(CT

AUTO AEC-Q TR NPNX2 Q1BSR=22KOHM

Manufacturer: Toshiba Semiconductor and Storage

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:
Technical Details:
PackagingCut Tape (CT)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Transistor Type2 NPN - Pre-Biased (Dual)
Power - Max100mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 10mA, 5V
Frequency - Transition250MHz
Resistor - Base (R1)22kOhms
Resistor - Emitter Base (R2)22kOhms
Supplier Device PackageES6
GradeAutomotive
QualificationAEC-Q101

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
RN2708JE(TE85L,F)

TRANS 2PNP PREBIAS 0.1W ESV

product image
RN4986,LXHF(CT

AUTO AEC-Q 2-IN-1 (POINT-SYM) NP

product image
RN4607(TE85L,F)

TRANS NPN/PNP PREBIAS 0.3W SM6