RN1902FE,LXHF(CT
AUTO AEC-Q TR NPNX2 Q1BSR=10KOHMManufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
Toshiba Semiconductor and Storage RN1902FE-LXHF-CT is an AEC-Q101 qualified dual NPN pre-biased bipolar transistor. This surface mount component, packaged in ES6 (SOT-563, SOT-666), features integrated base resistors of 10kOhms for both transistors. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device exhibits a transition frequency of 250MHz and a power dissipation of 100mW. With a minimum DC current gain (hFE) of 50 at 10mA, 5V, it is suited for applications requiring simplified biasing and reduced component count. Typical industries utilizing this component include automotive systems and general consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | ES6 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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