RN1902,LF(CT
TRANS 2NPN PREBIAS 0.2W US6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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Toshiba Semiconductor and Storage RN1902-LF-CT is a dual pre-biased NPN bipolar transistor array. This surface mount component, housed in a US6 package (6-TSSOP, SC-88, SOT-363), offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. Featuring a transition frequency of 250MHz and a maximum power dissipation of 200mW, it incorporates integrated base resistors of 10kOhms (R1) and emitter base resistors of 10kOhms (R2). The device exhibits a minimum DC current gain (hFE) of 50 at 10mA, 5V, and a saturation voltage (Vce Sat) of 300mV at 250µA, 5mA. It is supplied on tape and reel. This component is suitable for applications in industrial automation and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | US6 |
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