RN1901FETE85LF
TRANS 2NPN PREBIAS 0.1W ES6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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The Toshiba Semiconductor and Storage RN1901FETE85LF is a pre-biased bipolar transistor featuring two NPN elements in a single ES6 package. This surface mount device offers a collector current of 100mA with a breakdown voltage of 50V. It boasts a transition frequency of 250MHz and a maximum power dissipation of 100mW. The integrated base resistors (R1 and R2) are specified at 4.7 kOhms, simplifying circuit design. Typical applications include general-purpose switching and amplification in consumer electronics and industrial control systems. The device is supplied in Tape & Reel (TR) packaging for automated assembly.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 4.7kOhms |
| Supplier Device Package | ES6 |
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