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RN1711,LF

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RN1711,LF

NPNX2 BRT Q1BSR10KOHM Q1BERINF.K

Manufacturer: Toshiba Semiconductor and Storage

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

Toshiba Semiconductor and Storage RN1711-LF is a dual NPN pre-biased bipolar transistor array. This surface mount component, packaged in a 5-TSSOP, SC-70-5, SOT-353 (USV), offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features a built-in 10kOhm base resistor (R1) and achieves a transition frequency of 250MHz. The device dissipates a maximum power of 200mW and exhibits a saturation voltage of 300mV at 250µA/5mA. With a minimum DC current gain (hFE) of 120 at 1mA/5V and a collector cutoff current of 100nA (ICBO), this transistor array is suitable for applications in consumer electronics and industrial automation. It is supplied in tape and reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case5-TSSOP, SC-70-5, SOT-353
Mounting TypeSurface Mount
Transistor Type2 NPN - Pre-Biased (Dual)
Power - Max200mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Frequency - Transition250MHz
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)-
Supplier Device PackageUSV

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