RN1709JE(TE85L,F)
NPN X 2 BRT Q1BSR=47KOHM Q1BER=2Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
Toshiba Semiconductor and Storage RN1709JE-TE85L-F- is a 2 NPN - Pre-Biased (Dual) Bipolar Transistor Array designed for surface mount applications. This component features emitter-coupled configurations with integrated base resistors of 47kOhms and 22kOhms. It offers a collector current (Ic) capability of 100mA and a breakdown voltage (Vce) of 50V. The transition frequency is 250MHz, with a maximum power dissipation of 100mW. The device exhibits a minimum DC current gain (hFE) of 70 at 10mA, 5V and a Vce saturation of 300mV at 250µA, 5mA. Packaged in a SOT-553 (ESV) format on tape and reel, this component is suitable for use in automotive, industrial, and consumer electronics where space-constrained, pre-biased NPN transistor functionality is required.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-553 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | ESV |
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