RN1708JE(TE85L,F)
NPN X 2 BRT Q1BSR=22KOHM Q1BER=4Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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Toshiba Semiconductor and Storage RN1708JE-TE85L-F- is a dual, emitter-coupled NPN pre-biased bipolar transistor array. This surface mount device, packaged in SOT-553 (ESV), offers a collector current of 100mA and a collector emitter breakdown voltage of 50V. It features a transition frequency of 250MHz and a maximum power dissipation of 100mW. Internal base resistors are specified at 22kOhms for R1 and 47kOhms for R2. This component finds application in various electronic systems requiring simplified biasing and signal amplification, including consumer electronics and industrial control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-553 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | ESV |
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