RN1605TE85LF
TRANS 2NPN PREBIAS 0.3W SM6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar Transistor Arrays, Pre-Biased
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Toshiba Semiconductor and Storage presents the RN1605TE85LF, a dual NPN pre-biased bipolar junction transistor. This component is designed for surface mount applications, utilizing the SM6 package (SC-74, SOT-457). It features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device exhibits a transition frequency of 250MHz, with a minimum DC current gain (hFE) of 80 at 10mA and 5V. Integrated base resistors of 2.2kOhms (R1) and 47kOhms (R2) are included for pre-biasing. The RN1605TE85LF dissipates a maximum power of 300mW. This component is suitable for use in industrial automation, consumer electronics, and communication systems where simplified circuit design and reduced component count are beneficial. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SM6 |
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