MT3S20TU(TE85L)
RF TRANS NPN 12V 7GHZ UFMManufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar RF Transistors
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Toshiba Semiconductor and Storage MT3S20TU-TE85L- is an NPN bipolar RF transistor designed for high-frequency applications. This surface-mount component operates with a collector-emitter breakdown voltage of 12V and a maximum collector current of 80mA. It features a transition frequency of 7GHz and provides a typical gain of 12dB. The noise figure is rated at 1.45dB at 20mA and 5V. With a maximum power dissipation of 900mW, the MT3S20TU-TE85L- is suitable for demanding RF circuitry. The UFM package, supplied on tape and reel, is intended for automated assembly processes. This transistor finds application in wireless communication systems and other high-frequency signal processing equipment.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 12dB |
| Power - Max | 900mW |
| Current - Collector (Ic) (Max) | 80mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 5V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1.45dB @ 20mA, 5V |
| Supplier Device Package | UFM |
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