MT3S20P(TE12L,F)
RF TRANS NPN 12V 7GHZ PW-MINIManufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar RF Transistors
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Toshiba Semiconductor and Storage NPN RF Transistor, part number MT3S2P-TE12L-F-. This surface mount device is designed for high-frequency applications with a collector current (Ic) of 80mA and a collector-emitter breakdown voltage of 12V. It features a transition frequency of 7GHz and a typical gain of 16.5dB. The noise figure is rated at 1.45dB at 1GHz. With a maximum power dissipation of 1.8W and an operating temperature up to 150°C, this component is suitable for use in telecommunications and other high-frequency signal amplification circuits. The TO-243AA package, also known as PW-MINI, is supplied in Tape & Reel (TR).
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 16.5dB |
| Power - Max | 1.8W |
| Current - Collector (Ic) (Max) | 80mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 5V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1.45dB @ 1GHz |
| Supplier Device Package | PW-MINI |