Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar RF Transistors

MT3S113P(TE12L,F)

Banner
productimage

MT3S113P(TE12L,F)

RF TRANS NPN 5.3V 7.7GHZ PW-MINI

Manufacturer: Toshiba Semiconductor and Storage

Categories: Bipolar RF Transistors

Quality Control: Learn More

RF Transistor NPN 5.3V 100mA 7.7GHz 1.6W Surface Mount PW-MINI

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain10.5dB
Power - Max1.6W
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 30mA, 5V
Frequency - Transition7.7GHz
Noise Figure (dB Typ @ f)1.45dB @ 1GHz
Supplier Device PackagePW-MINI

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
MT3S113(TE85L,F)

RF TRANS NPN 5.3V 12.5GHZ SMINI

product image
2SC5084-O(TE85L,F)

RF TRANS NPN 12V 7GHZ SMINI

product image
2SC4915-O,LF

RF TRANS NPN 30V 550MHZ SSM