Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar RF Transistors

MT3S113(TE85L,F)

Banner
productimage

MT3S113(TE85L,F)

RF TRANS NPN 5.3V 12.5GHZ SMINI

Manufacturer: Toshiba Semiconductor and Storage

Categories: Bipolar RF Transistors

Quality Control: Learn More

RF Transistor NPN 5.3V 100mA 12.5GHz 800mW Surface Mount S-Mini

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain11.8dB
Power - Max800mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 30mA, 5V
Frequency - Transition12.5GHz
Noise Figure (dB Typ @ f)1.45dB @ 1GHz
Supplier Device PackageS-Mini

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
MT4S300U(TE85L,O,F

X34 PB-F RADIO-FREQUENCY SIGE HE

product image
MT3S113P(TE12L,F)

RF TRANS NPN 5.3V 7.7GHZ PW-MINI

product image
MT3S111P(TE12L,F)

RF TRANS NPN 6V 8GHZ PW-MINI