MT3S111TU,LF
RF SIGE NPN BIPOLAR TRANSISTOR NManufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar RF Transistors
Quality Control: Learn More
RF Transistor NPN 6V 100mA 10GHz 800mW Surface Mount UFM
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 12.5dB |
| Power - Max | 800mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 30mA, 5V |
| Frequency - Transition | 10GHz |
| Noise Figure (dB Typ @ f) | 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz |
| Supplier Device Package | UFM |
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