MT3S111P(TE12L,F)
RF TRANS NPN 6V 8GHZ PW-MINIManufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar RF Transistors
Quality Control: Learn More
Toshiba Semiconductor and Storage's MT3S111P-TE12L-F- is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component, housed in a PW-MINI (TO-243AA) package, offers a 6V collector-emitter breakdown voltage and a maximum collector current of 100mA. It features a transition frequency of 8GHz and a typical gain of 10.5dB. The device exhibits a low noise figure of 1.25dB at 1GHz and a minimum DC current gain (hFE) of 200 at 30mA and 5V. With a maximum power dissipation of 1W and an operating junction temperature of 150°C, this transistor is suitable for use in wireless communication systems and other RF amplification circuits. The part is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 10.5dB |
| Power - Max | 1W |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 30mA, 5V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 1.25dB @ 1GHz |
| Supplier Device Package | PW-MINI |
Request a Quote
Clients Also Buy
2SC4915-O,LF
RF TRANS NPN 30V 550MHZ SSM
MT3S113(TE85L,F)
RF TRANS NPN 5.3V 12.5GHZ SMINI
MT3S113P(TE12L,F)
RF TRANS NPN 5.3V 7.7GHZ PW-MINI
