HN3C10FUTE85LF
RF TRANS 2 NPN 12V 7GHZ US6Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar RF Transistors
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Toshiba Semiconductor and Storage HN3C10FUTE85LF is a dual NPN bipolar RF transistor designed for high-frequency applications. This surface mount component, housed in a US6 package (6-TSSOP, SC-88, SOT-363), operates at a collector-emitter breakdown voltage of 12V and a maximum collector current of 80mA. It exhibits a minimum DC current gain (hFE) of 80 at 20mA, 10V and a transition frequency (fT) of 7GHz. With a typical gain of 11.5dB and a noise figure of 1.1dB at 1GHz, this device is suitable for use in wireless communication systems and other RF front-end circuitry. The HN3C10FUTE85LF is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | - |
| Gain | 11.5dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 80mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 20mA, 10V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
| Supplier Device Package | US6 |
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