2SC5096-R,LF
RF TRANS NPN 10V 10GHZ SSMManufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar RF Transistors
Quality Control: Learn More
Toshiba Semiconductor and Storage NPN RF Transistor, part number 2SC5096-R-LF. This bipolar RF transistor offers a 10V collector-emitter breakdown voltage and a maximum collector current of 15mA. Engineered for high-frequency applications, it boasts a transition frequency of 10GHz and a typical gain of 1.4dB at 1GHz, with a low noise figure of 1.4dB at the same frequency. The device is rated for a maximum power dissipation of 100mW and operates at junction temperatures up to 125°C. It is supplied in a compact SC-75, SOT-416 package (SSM) for surface mounting and is delivered on a Tape & Reel (TR) for automated assembly. This component is suitable for use in various communication and RF amplification circuits across industries such as telecommunications and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 125°C (TJ) |
| Gain | 1.4dB |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 15mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 7mA, 6V |
| Frequency - Transition | 10GHz |
| Noise Figure (dB Typ @ f) | 1.4dB @ 1GHz |
| Supplier Device Package | SSM |
Request a Quote
Clients Also Buy
MT3S113(TE85L,F)
RF TRANS NPN 5.3V 12.5GHZ SMINI
MT4S300U(TE85L,O,F
X34 PB-F RADIO-FREQUENCY SIGE HE
MT3S113P(TE12L,F)
RF TRANS NPN 5.3V 7.7GHZ PW-MINI
