2SC5095-R(TE85L,F)
RF TRANS NPN 10V 10GHZ SC70Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar RF Transistors
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Toshiba Semiconductor and Storage NPN RF Transistor, Part Number 2SC5095-R-TE85L-F-. This surface mount device operates up to 10GHz with a collector current of 15mA and a maximum power dissipation of 100mW. It features a collector-emitter breakdown voltage of 10V and a minimum DC current gain (hFE) of 50 at 7mA, 6V. The transistor offers a typical noise figure of 1.8dB at 2GHz and a gain range of 13dB to 7.5dB. Packaged in SC-70 (SOT-323) for tape and reel deployment, this component is suitable for applications in wireless communication systems, satellite equipment, and other high-frequency circuits. The device operates across an extended temperature range up to 125°C.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 125°C (TJ) |
| Gain | 13dB ~ 7.5dB |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 15mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 7mA, 6V |
| Frequency - Transition | 10GHz |
| Noise Figure (dB Typ @ f) | 1.8dB @ 2GHz |
| Supplier Device Package | SC-70 |
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