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2SC5095-O(TE85L,F)

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2SC5095-O(TE85L,F)

RF TRANS NPN 10V 10GHZ SC70

Manufacturer: Toshiba Semiconductor and Storage

Categories: Bipolar RF Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage NPN RF Transistor, part number 2SC5095-O-TE85L-F-. This surface mount device is designed for high-frequency applications, operating up to 10GHz. It features a collector-emitter breakdown voltage of 10V and a maximum collector current of 15mA. The transistor offers a minimum DC current gain (hFE) of 80 at 7mA and 6V, with a power dissipation of 100mW. Gain ranges from 13dB to 7dB, and a typical noise figure of 1.8dB at 2GHz is provided. The SC-70 (SOT-323) package is supplied on tape and reel. This component is suitable for use in wireless communications, satellite receivers, and other RF front-end circuitry.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature125°C (TJ)
Gain13dB ~ 7dB
Power - Max100mW
Current - Collector (Ic) (Max)15mA
Voltage - Collector Emitter Breakdown (Max)10V
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 7mA, 6V
Frequency - Transition10GHz
Noise Figure (dB Typ @ f)1.8dB @ 2GHz
Supplier Device PackageSC-70

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