2SC5095-O(TE85L,F)
RF TRANS NPN 10V 10GHZ SC70Manufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar RF Transistors
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Toshiba Semiconductor and Storage NPN RF Transistor, part number 2SC5095-O-TE85L-F-. This surface mount device is designed for high-frequency applications, operating up to 10GHz. It features a collector-emitter breakdown voltage of 10V and a maximum collector current of 15mA. The transistor offers a minimum DC current gain (hFE) of 80 at 7mA and 6V, with a power dissipation of 100mW. Gain ranges from 13dB to 7dB, and a typical noise figure of 1.8dB at 2GHz is provided. The SC-70 (SOT-323) package is supplied on tape and reel. This component is suitable for use in wireless communications, satellite receivers, and other RF front-end circuitry.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 125°C (TJ) |
| Gain | 13dB ~ 7dB |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 15mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 7mA, 6V |
| Frequency - Transition | 10GHz |
| Noise Figure (dB Typ @ f) | 1.8dB @ 2GHz |
| Supplier Device Package | SC-70 |
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