2SC5088-O(TE85L,F)
RF TRANS NPN 12V 7GHZ USQManufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar RF Transistors
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Toshiba Semiconductor and Storage NPN RF Transistor, part number 2SC5088-O-TE85L-F-. This bipolar RF transistor is designed for high-frequency applications, featuring a collector-emitter breakdown voltage of 12V and a maximum collector current of 80mA. With a transition frequency of 7GHz and a typical gain of 18dB, it is suitable for RF amplification stages. The device exhibits a low noise figure of 1dB at 500MHz. The 2SC5088-O-TE85L-F- is housed in a compact USQ (SC-82A, SOT-343) surface mount package, ideal for automated assembly. It operates at a maximum power dissipation of 100mW and can withstand junction temperatures up to 125°C. The minimum DC current gain (hFE) is 80 at 20mA and 10V. This component finds application in wireless communication systems and other high-frequency electronic designs. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82A, SOT-343 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 125°C (TJ) |
| Gain | 18dB |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 80mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 20mA, 10V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1dB @ 500MHz |
| Supplier Device Package | USQ |