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2SC5088-O(TE85L,F)

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2SC5088-O(TE85L,F)

RF TRANS NPN 12V 7GHZ USQ

Manufacturer: Toshiba Semiconductor and Storage

Categories: Bipolar RF Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage NPN RF Transistor, part number 2SC5088-O-TE85L-F-. This bipolar RF transistor is designed for high-frequency applications, featuring a collector-emitter breakdown voltage of 12V and a maximum collector current of 80mA. With a transition frequency of 7GHz and a typical gain of 18dB, it is suitable for RF amplification stages. The device exhibits a low noise figure of 1dB at 500MHz. The 2SC5088-O-TE85L-F- is housed in a compact USQ (SC-82A, SOT-343) surface mount package, ideal for automated assembly. It operates at a maximum power dissipation of 100mW and can withstand junction temperatures up to 125°C. The minimum DC current gain (hFE) is 80 at 20mA and 10V. This component finds application in wireless communication systems and other high-frequency electronic designs. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 12 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-82A, SOT-343
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature125°C (TJ)
Gain18dB
Power - Max100mW
Current - Collector (Ic) (Max)80mA
Voltage - Collector Emitter Breakdown (Max)12V
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 20mA, 10V
Frequency - Transition7GHz
Noise Figure (dB Typ @ f)1dB @ 500MHz
Supplier Device PackageUSQ

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