2SC5087YTE85LF
RF TRANS NPN 12V 7GHZ SMQManufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar RF Transistors
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Toshiba Semiconductor and Storage NPN RF Transistor, part number 2SC5087YTE85LF, is engineered for high-frequency applications. This surface mount device operates up to 7GHz with a collector current of 80mA and a maximum collector-emitter breakdown voltage of 12V. It offers a typical gain of 13dB and a low noise figure of 1.1dB at 1GHz. The transistor is rated for 150mW maximum power dissipation and is supplied in an SMQ package, tape and reel. Its robust design, featuring a minimum DC current gain (hFE) of 120 at 20mA and 10V, makes it suitable for use in telecommunications and other high-frequency signal amplification circuits. The operating temperature range extends to 125°C.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-61AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 125°C (TJ) |
| Gain | 13dB |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 80mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 20mA, 10V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
| Supplier Device Package | SMQ |
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