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2SC5087YTE85LF

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2SC5087YTE85LF

RF TRANS NPN 12V 7GHZ SMQ

Manufacturer: Toshiba Semiconductor and Storage

Categories: Bipolar RF Transistors

Quality Control: Learn More

Toshiba Semiconductor and Storage NPN RF Transistor, part number 2SC5087YTE85LF, is engineered for high-frequency applications. This surface mount device operates up to 7GHz with a collector current of 80mA and a maximum collector-emitter breakdown voltage of 12V. It offers a typical gain of 13dB and a low noise figure of 1.1dB at 1GHz. The transistor is rated for 150mW maximum power dissipation and is supplied in an SMQ package, tape and reel. Its robust design, featuring a minimum DC current gain (hFE) of 120 at 20mA and 10V, makes it suitable for use in telecommunications and other high-frequency signal amplification circuits. The operating temperature range extends to 125°C.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-61AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature125°C (TJ)
Gain13dB
Power - Max150mW
Current - Collector (Ic) (Max)80mA
Voltage - Collector Emitter Breakdown (Max)12V
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 20mA, 10V
Frequency - Transition7GHz
Noise Figure (dB Typ @ f)1.1dB @ 1GHz
Supplier Device PackageSMQ

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