2SC5086-Y,LF
RF TRANS NPN 12V 7GHZ SSMManufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar RF Transistors
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Toshiba Semiconductor and Storage NPN RF Transistor, part number 2SC5086-Y-LF, is designed for high-frequency applications. This bipolar RF transistor features a collector current (Ic) of 80mA and a collector-emitter breakdown voltage of 12V. With a transition frequency (fT) of 7GHz and a maximum power dissipation of 100mW, it is suitable for demanding RF circuits. The device exhibits a minimum DC current gain (hFE) of 120 at 20mA and 10V, and a typical noise figure of 1dB at 500MHz.
The 2SC5086-Y-LF is packaged in an SC-75 (SOT-416) surface-mount case and supplied on tape and reel. Its operating temperature range extends to 125°C (TJ). This component finds application in wireless communication systems and other RF front-end designs requiring robust performance at high frequencies.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 125°C (TJ) |
| Gain | - |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 80mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 20mA, 10V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1dB @ 500MHz |
| Supplier Device Package | SSM |
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