2SC5086-O,LF
RF TRANS NPN 12V 7GHZ SSMManufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar RF Transistors
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Toshiba Semiconductor and Storage's 2SC5086-O-LF is an NPN bipolar RF transistor designed for high-frequency applications. This component offers a collector current (Ic) of up to 80mA and a cutoff frequency (fT) of 7GHz, making it suitable for demanding RF circuitry. It features a maximum collector-emitter breakdown voltage (Vce) of 12V and a power dissipation of 100mW. The device exhibits a typical DC current gain (hFE) of 80 at 20mA and 10V, with a noise figure of 1dB at 500MHz. Packaged in an SSM (SC-75, SOT-416) for surface mounting, it operates reliably up to 125°C (TJ). This transistor is commonly employed in wireless communication systems, mobile infrastructure, and other signal amplification circuits requiring robust RF performance.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 125°C (TJ) |
| Gain | - |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 80mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 20mA, 10V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1dB @ 500MHz |
| Supplier Device Package | SSM |
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