2SC5085-Y(TE85L,F)
RF TRANS NPN 12V 7GHZ USMManufacturer: Toshiba Semiconductor and Storage
Categories: Bipolar RF Transistors
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Toshiba Semiconductor and Storage NPN RF Transistor, part number 2SC5085-Y-TE85L-F-. This surface mount SC-70 packaged device operates at a collector current of up to 80mA and boasts a collector emitter breakdown voltage of 12V. Featuring a transition frequency of 7GHz and a maximum power dissipation of 100mW, it offers a gain range of 11dB to 16.5dB. The minimum DC current gain (hFE) is 120 at 20mA, 10V, with a typical noise figure of 1.1dB at 1GHz. Operating temperature is rated up to 125°C (TJ). This component is commonly utilized in wireless infrastructure, mobile communications, and industrial automation applications. Supplied on tape and reel (TR).
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 125°C (TJ) |
| Gain | 11dB ~ 16.5dB |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 80mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 20mA, 10V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
| Supplier Device Package | SC-70 |
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